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Materials and Physics for Nonvolatile Memories: Volume 1160
Hardback
Main Details
| Title |
Materials and Physics for Nonvolatile Memories: Volume 1160
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| Authors and Contributors |
Edited by Yoshihisa Fujisaki
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Edited by Rainer Waser
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Edited by Tingkai Li
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Edited by Caroline Bonafos
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| Series | MRS Proceedings |
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| Physical Properties |
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| Category/Genre | Materials science |
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| ISBN/Barcode |
9781605111339
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| Classifications | Dewey:620.11 |
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| Audience | | Professional & Vocational | |
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Publishing Details |
| Publisher |
Materials Research Society
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| Imprint |
Materials Research Society
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| Publication Date |
17 November 2009 |
| Publication Country |
United States
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Description
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
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