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Artificially Induced Grain Alignment in Thin Films: Volume 1150

Hardback

Main Details

Title Artificially Induced Grain Alignment in Thin Films: Volume 1150
Authors and Contributors      Edited by Vladimir Matias
Edited by Ruben Huhne
Edited by Seung-Hyun Moon
Edited by Robert Hammond
SeriesMRS Proceedings
Physical Properties
Format:Hardback
Pages:193
Dimensions(mm): Height 235,Width 160
Category/GenreMaterials science
ISBN/Barcode 9781605111223
ClassificationsDewey:621.3815
Audience
Professional & Vocational

Publishing Details

Publisher Materials Research Society
Imprint Materials Research Society
Publication Date 17 November 2009
Publication Country United States

Description

Thin-film growth is a very old art and an established scientific field in materials science. For decades, growth of monocrystal-like films has been practiced by making use of epitaxy on monocrystalline substrates. In the quest for greater control of materials, the next level of achievement will be to grow well-oriented thin films on arbitrary substrates, i.e., without the need for monocrystalline substrates. That is the goal of artificially inducing grain alignment in thin films. Texturing methods show significant promise in fabricating technologically attractive grain-aligned films. However, over the last three decades a variety of methods for grain alignment have been demonstrated with varying degrees of success. The focus of this book is on physical vapor deposition methods for growth of inorganic thin films, with special attention paid to ion beam assisted deposition (IBAD) texturing. Topics include: milestones in IBAD texturing; IBAD texturing; IBAD long-length application and texturing by other techniques.