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Defect and Impurity Engineered Semiconductors and Devices: Volume 378

Hardback

Main Details

Title Defect and Impurity Engineered Semiconductors and Devices: Volume 378
Authors and Contributors      Edited by I. Akasaki
Edited by S. Ashok
Edited by J. Chevallier
Edited by N. M. Johnson
Edited by B. L. Sopori
SeriesMRS Proceedings
Physical Properties
Format:Hardback
Pages:1082
Dimensions(mm): Height 237,Width 160
Category/GenreMaterials science
ISBN/Barcode 9781558992818
ClassificationsDewey:621.38152
Audience
Professional & Vocational
Illustrations Worked examples or Exercises

Publishing Details

Publisher Materials Research Society
Imprint Materials Research Society
Publication Date 16 October 1995
Publication Country United States

Description

Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.